Since a high Schottky barrier is usually formed at the metal/n-type SiC interface due to the low electron affinity of SiC, it is difficult to obtain low-resistivity ohmic contacts on n-type SiC without sintering. In the current process, ohmic contacts (typically NiSix) are formed by sintering at about 1000°C after metal deposition on heavily-doped n-type SiC, but the formation mechanism of ohmic behavior is not well understood. Since a metal with a small work function is desirable to achieve low contact resistivity (ρC) on n-type SiC, Ti which has the small work function (4.33 eV) is a promising candidate. In this study, the current–voltage characteristics, barrier height, and ρC of the Ti electrodes formed on n-type SiC were systematically investigated by changing the sintering temperature.